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IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc

  • IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc
Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS43R16160F-6TLI
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR Memory Size 256Mbit
Memory Organization 16M X 16 Memory Interface Parallel
Clock Frequency 166 MHz Write Cycle Time - Word, Page 15ns
Access Time 700 Ps Voltage - Supply 2.3V ~ 2.7V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package 66-TSOP II
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IS46R16320D-5TLA1 IC DRAM 512MBIT PAR 66TSOP II
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IS46R16320D-6TLA2 IC DRAM 512MBIT PAR 66TSOP II
IS43R16800A-5TL-TR IC DRAM 128MBIT PAR 66TSOP II
IS43R16160B-6TL IC DRAM 256MBIT PAR 66TSOP II
IS43R83200B-6TL IC DRAM 256MBIT PAR 66TSOP II
IS43R83200B-5TL IC DRAM 256MBIT PAR 66TSOP II
IS43R16160B-6TL-TR IC DRAM 256MBIT PAR 66TSOP II
IS43R16160B-5TL-TR IC DRAM 256MBIT PAR 66TSOP II
IS43R83200B-6TL-TR IC DRAM 256MBIT PAR 66TSOP II
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IS43R16800C-5TL IC DRAM 128MBIT PAR 66TSOP II
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IS43R16160B-5TLI-TR IC DRAM 256MBIT PAR 66TSOP II
IS43R16160B-6TLI IC DRAM 256MBIT PAR 66TSOP II
IS43R16160B-6TLI-TR IC DRAM 256MBIT PAR 66TSOP II
IS43R86400E-5TLI IC DRAM 512MBIT PAR 66TSOP II
IS43R86400E-5TLI-TR IC DRAM 512MBIT PAR 66TSOP II
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IS43R86400E-6TLI-TR IC DRAM 512MBIT PAR 66TSOP II
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Part Number Description
Product Description

Product Details

 

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8n-bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
● Write Leveling
● Up to 200 MHz on DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 66-TSSOP (0.400", 10.16mm Width)
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 2.3 V ~ 2.7 V
Supplier-Device-Package 66-TSOP II
Memory Capacity 256M (16M x 16)
Memory-Type DDR SDRAM
Speed 166MHz
Format-Memory RAM

Descriptions

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 66-TSOP II
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II
DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz
Tags:

Stable Flash Memory IC

Flash Memory IC Non Volatile

SPI Flash Memory IC