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IS42S16320F-7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc
| Brand Name | ISSI, Integrated Silicon Solution Inc |
|---|---|
| Model Number | IS42S16320F-7BLI |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM | Memory Size | 512Mbit |
| Memory Organization | 32M X 16 | Memory Interface | Parallel |
| Clock Frequency | 143 MHz | Write Cycle Time - Word, Page | - |
| Access Time | 5.4 Ns | Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA | Supplier Device Package | 54-TW-BGA (8x13) |
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| Part Number | Description | |
|---|---|---|
| IS42S16320F-7BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-7BL | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-7BL-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-7BL | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-6BL-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-6BL | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-6BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-7BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320F-6BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-7BL-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-7BLA1-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-7BLA1 | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-6BL-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-6BL | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-6BLA1-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-6BLA1 | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-7BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-7BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-6BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16320D-6BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-7BLA2-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320F-7BLA2 | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320D-7BLA1 | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320D-7BLA1-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320D-7BLA2 | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16320D-7BLA2-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42S16160B-7BL | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-6B | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-6B-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-6BL | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-6BL-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7B | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7B-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7BI | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7BI-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7BL-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7BLI | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160B-7BLI-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16800D-6B | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-6B-TR | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-7B | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-7B-TR | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-75EBL | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-75EBLI | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16160B-6BLI | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16800D-75EBL-TR | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16800D-75EBLI-TR | IC DRAM 128MBIT PAR 54MINIBGA | |
| IS42S16160B-6BLI-TR | IC DRAM 256MBIT PAR 54LFBGA | |
| IS42S16160D-6BL | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-6BLI | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-6BLI-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-6BL-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7B | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BI | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BI-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BL | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BLI | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BLI-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7BL-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-7B-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-75EBL | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-75EBL-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-75EBLI | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16160D-75EBLI-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS42S16320B-7BL | IC DRAM 512MBIT PAR 54WBGA | |
| IS42S16320B-6BL | IC DRAM 512MBIT PARALLEL 54WBGA | |
| IS42S16320B-6BLI | IC DRAM 512MBIT PARALLEL 54WBGA | |
| IS42S16320B-6BLI-TR | IC DRAM 512MBIT PARALLEL 54WBGA | |
| IS42S16320B-6BL-TR | IC DRAM 512MBIT PARALLEL 54WBGA | |
| IS42S16320B-7BLI | IC DRAM 512MBIT PAR 54WBGA | |
| IS42S16320B-7BLI-TR | IC DRAM 512MBIT PAR 54WBGA | |
| IS42S16320B-7BL-TR | IC DRAM 512MBIT PAR 54WBGA | |
| IS42VM16320D-6BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42VM16320D-6BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42VM16320D-75BLI | IC DRAM 512MBIT PAR 54TFBGA | |
| IS42VM16320D-75BLI-TR | IC DRAM 512MBIT PAR 54TFBGA | |
| IS45S16160D-6BLA1 | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16160D-6BLA1-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16160D-7BLA1 | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16160D-7BLA1-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16160D-7BLA2 | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16160D-7BLA2-TR | IC DRAM 256MBIT PAR 54TFBGA | |
| IS45S16320B-7BLA1 | IC DRAM 512MBIT PAR 54WBGA | |
| IS45S16320B-7BLA1-TR | IC DRAM 512MBIT PAR 54WBGA |
Product Description
Product Details
DEVICE OVERVIEW
ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 200, 166, 143 MHz• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) x32: 90-ball TF-BGA
• Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC)
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray Alternate Packaging |
| Package-Case | 54-TFBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 54-TWBGA (13x8) |
| Memory Capacity | 512M (32M x 16) |
| Memory-Type | SDRAM |
| Speed | 143MHz |
| Format-Memory | RAM |
Descriptions
SDRAM Memory IC 512Mb (32M x 16) Parallel 143MHz 5.4ns 54-TWBGA (13x8)
DRAM Chip SDRAM 512Mbit 32Mx16 3.3V 54-Pin TW-BGA
DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 ball BGA (8mmx13mm), RoHS, IT
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