IS25LP128-JKLE IC FLASH 128MBIT SPI/QUAD 8WSON ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS25LP128-JKLE
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 128Mbit
Memory Organization 16M X 8 Memory Interface SPI - Quad I/O, QPI
Clock Frequency 133 MHz Write Cycle Time - Word, Page 1ms
Access Time - Voltage - Supply 2.3V ~ 3.6V
Operating Temperature -40°C ~ 105°C (TA) Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad Supplier Device Package 8-WSON (6x5)
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Part Number Description
Product Description

Product Details

 

GENERAL DESCRIPTION

The IS25LQ016 are 16 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad output. The devices are designed to support a 50 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

 

 

FEATURES

• Single Power Supply Operation
- Low voltage range: 2.3 V - 3.6 V
• Memory Organization
- IS25LQ016: 2048K x 8 (16 Mbit)
• Cost Effective Sector/Block Architecture
- 16Mb : Uniform 4KByte sectors / Thirty-two uniform 64KByte blocks
• Serial Peripheral Interface (SPI) Compatible
- Supports single-, dual- or quad-output
- Supports SPI Modes 0 and 3
- Maximum 50 MHz clock rate for normal read
- Maximum 104 MHz clock rate for fast read
- Maximum 208MHz clock rate equivalent Dual SPI
- Maximum 400MHz clock rate equivalent Quad SPI
• Byte Program Operation
- Typical 10 us/Byte
• Page Program (up to 256 Bytes) Operation
- Maximum 0.7ms per page program
• Sector, Block or Chip Erase Operation
- Sector Erase (4KB) -> 150ms (Typ)
- Block Erase (64KB) -> 500ms (Typ)
- Chip Erase -> 5s (Typ)
• Low Power Consumption
- Max 12 mA active read current
- Max 20 mA program/erase current
- Max 30 uA standby current
• Hardware Write Protection
- Protect and unprotect the device from write operation by Write Protect (WP#) Pin
• Software Write Protection
- The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only
• High Product Endurance
- Guaranteed 100,000 program/erase cycles per single sector
- Minimum 20 years data retention
• Industrial Standard Pin-out and Package
- 8-pin 208mil SOIC
- 8-contact WSON
- PDIP
- 8-pin 208mil VSOP
- Lead-free (Pb-free) package
• Additional 256-byte Security information one-time programmable (OTP) area
• Special protect function
- Safe guard function (Appendix 1)
- Sector unlock function (Appendix 2)

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray
Package-Case 8-WDFN Exposed Pad
Operating-Temperature -40°C ~ 105°C (TA)
Interface SPI Serial
Voltage-Supply 2.3 V ~ 3.6 V
Supplier-Device-Package 8-WSON (6x5)
Memory Capacity 128M (16M x 8)
Memory-Type FLASH - NOR
Speed 133MHz
Format-Memory FLASH

Descriptions

FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O, QPI 133MHz 8-WSON (6x5)
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V 128M-bit 16M x 8 7ns 8-Pin WSON EP
Flash Memory 128Mb QPI/QSPI, WSON, RoHS, ET