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MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc.

  • MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc.
Brand Name Micron Technology Inc.
Model Number MT47H128M16RT-25E:C TR
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR2 Memory Size 2Gbit
Memory Organization 128M X 16 Memory Interface Parallel
Clock Frequency 400 MHz Write Cycle Time - Word, Page 15ns
Access Time 400 Ps Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount
Package / Case 84-TFBGA Supplier Device Package 84-FBGA (9x12.5)
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Part Number Description
MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E IT:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E AIT:C TR IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E IT:C TR IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E XIT:C TR IC DRAM 2GBIT PARALLEL 84FBGA
IS43DR16640B-25DBLI IC DRAM 1GBIT PARALLEL 84TWBGA
IS43DR16640B-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA
IS43DR16640B-25DBL-TR IC DRAM 1GBIT PARALLEL 84TWBGA
IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA
MT47H128M16RT-25E AIT:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H64M16HR-3:E TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E IT:G IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E IT:G TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E L:G IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E L:G TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 IT:G IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 IT:G TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 L:G IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 L:G TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3:G TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H32M16HR-25E:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H32M16HR-3:F IC DRAM 512MBIT PARALLEL 84FBGA
MT47H128M16RT-3:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H32M16HR-187E:G IC DRAM 512MBIT PAR 84FBGA
MT47H32M16HR-25E AAT:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H32M16HR-25E IT:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H32M16HR-25E L:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H64M16HR-187E:H IC DRAM 1GBIT PAR 84FBGA
MT47H64M16HR-25 IT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E AAT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E AIT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E IT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E L:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 AAT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 AIT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 IT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47R64M16HR-25:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47R64M16HR-3:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47R64M16HR-25E:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H32M16HR-25E IT:G TR IC DRAM 512MBIT PARALLEL 84FBGA
MT47H64M16HR-25:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E IT:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-25E:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 AAT:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3 IT:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HR-3:H TR IC DRAM 1GBIT PARALLEL 84FBGA
MT47H128M16PK-25E IT:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H32M16HR-25E AIT:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H32M16HW-25E IT:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H32M16HW-25E:G IC DRAM 512MBIT PARALLEL 84FBGA
MT47H64M16HW-3 IT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H64M16HW-3:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H32M16HW-25E AAT:G TR IC DRAM 512MBIT PARALLEL 84FBGA
MT47H128M16RT-25E AAT:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H128M16RT-25E XIT:C IC DRAM 2GBIT PARALLEL 84FBGA
MT47H64M16HR-25E XIT:H IC DRAM 1GBIT PARALLEL 84FBGA
MT47H128M16RT-25E AAT:C TR IC DRAM 2GBIT PARALLEL 84FBGA
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Part Number Description
Product Description

Product Details

 

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks

 

 

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification

 

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
Packaging Tape & Reel (TR) Alternate Packaging
Package-Case84-TFBGA
Operating-Temperature 0°C ~ 85°C (TC)
InterfaceParallel
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package84-FBGA (9x12.5)
Memory Capacity 2G (128M x 16)
Memory-Type DDR2 SDRAM
Speed2.5ns
Format-MemoryRAM

Descriptions

SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5)
Tags:

Stable Flash Memory IC

Flash Memory IC Non Volatile

SPI Flash Memory IC