W979H2KBVX2I IC DRAM 512MBIT PAR 134VFBGA Winbond Electronics

 

GENERAL DESCRIPTION

The W9712G6JB is a 128M bits DDR2 SDRAM, organized as 2,097,152 words ×4 banks ×16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general applications. W9712G6JB is sorted into the followingspeed grades: -18, -25, 25I, 25A and -3. The -18 is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25Aare compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade and 25A automotive grade which is guaranteed to support -40°C ≤TCASE ≤95°C). The -3 is compliant to the DDR2-667 (5-5-5) specification.

 

 

FEATURES

Power Supply: VDD, VDDQ= 1.8 V ±0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK)
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 84 Ball (8X12.5 mm²), using Lead free materials with RoHS compliant