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W9725G6KB-25 TR IC DRAM 256MBIT PARALLEL 84WBGA Winbond Electronics

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xProduct Details
Memory Type | Volatile | Memory Format | DRAM |
---|---|---|---|
Technology | SDRAM - DDR2 | Memory Size | 256Mbit |
Memory Organization | 16M X 16 | Memory Interface | Parallel |
Clock Frequency | 400 MHz | Write Cycle Time - Word, Page | 15ns |
Access Time | 400 Ps | Voltage - Supply | 1.7V ~ 1.9V |
Operating Temperature | 0°C ~ 85°C (TC) | Mounting Type | Surface Mount |
Package / Case | 84-TFBGA | Supplier Device Package | 84-WBGA (8x12.5) |
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Part Number | Description | |
---|---|---|
W9725G6KB-25 TR | IC DRAM 256MBIT PARALLEL 84WBGA | |
W971GG6NB-25 TR | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W9725G6KB-25 | IC DRAM 256MBIT PARALLEL 84WBGA | |
W971GG6NB-25 | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W972GG6KB-25 | IC DRAM 2GBIT PARALLEL 84WBGA | |
W971GG6NB-18 | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W971GG6NB25I | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W9712G6KB-25 TR | IC DRAM 128MBIT PAR 84TFBGA | |
W9712G6KB-25 | IC DRAM 128MBIT PAR 84TFBGA | |
W9712G6KB25I TR | IC DRAM 128MBIT PAR 84TFBGA | |
W9712G6KB25I | IC DRAM 128MBIT PAR 84TFBGA | |
W9725G6KB-18 TR | IC DRAM 256MBIT PAR 84WBGA | |
W9725G6KB25I TR | IC DRAM 256MBIT PARALLEL 84WBGA | |
W9725G6KB-18 | IC DRAM 256MBIT PAR 84WBGA | |
W9725G6KB25I | IC DRAM 256MBIT PARALLEL 84WBGA | |
W971GG6NB-18 TR | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W971GG6NB25I TR | IC DRAM 1GBIT SSTL 18 84TFBGA | |
W972GG6KB-25 TR | IC DRAM 2GBIT PARALLEL 84WBGA | |
W972GG6KB-18 TR | IC DRAM 2GBIT PAR 84WBGA | |
W972GG6KB-18 | IC DRAM 2GBIT PAR 84WBGA | |
W972GG6KB25I TR | IC DRAM 2GBIT PARALLEL 84WBGA | |
W972GG6KB25I | IC DRAM 2GBIT PARALLEL 84WBGA | |
W9725G6IB-25 | IC DRAM 256MBIT PARALLEL 84WBGA | |
W9751G6IB-25 | IC DRAM 512MBIT PARALLEL 84WBGA | |
W9751G6KB-25 | IC DRAM 512MBIT PARALLEL 84WBGA | |
W9725G6JB25I | IC DRAM 256MBIT PARALLEL 84WBGA | |
W971GG6KB-18 | IC DRAM 1GBIT PAR 84WBGA | |
W971GG6KB-25 | IC DRAM 1GBIT PARALLEL 84WBGA | |
W971GG6KB25I | IC DRAM 1GBIT PARALLEL 84WBGA | |
W9751G6KB-18 | IC DRAM 512MBIT PAR 84WBGA | |
W9751G6KB25I | IC DRAM 512MBIT PARALLEL 84WBGA | |
W971GG6SB-18 | IC DRAM 1GBIT PAR 84WBGA | |
W971GG6SB-25 | IC DRAM 1GBIT PARALLEL 84WBGA | |
W971GG6SB25I | IC DRAM 1GBIT PARALLEL 84WBGA | |
W971GG6KB-18 TR | IC DRAM 1GBIT PAR 84WBGA | |
W971GG6KB-25 TR | IC DRAM 1GBIT PARALLEL 84WBGA | |
W971GG6KB25I TR | IC DRAM 1GBIT PARALLEL 84WBGA | |
W971GG6SB-18 TR | IC DRAM 1GBIT PAR 84WBGA | |
W971GG6SB25I TR | IC DRAM 1GBIT PARALLEL 84WBGA | |
W9751G6KB-18 TR | IC DRAM 512MBIT PAR 84WBGA | |
W9751G6KB25I TR | IC DRAM 512MBIT PARALLEL 84WBGA | |
W972GG8KB-18 | IC DRAM 2GBIT PAR 84WBGA | |
W972GG8KB25I | IC DRAM 2GBIT PARALLEL 84WBGA | |
W972GG8KB-25 | IC DRAM 2GBIT PARALLEL 84WBGA | |
W9751G6KB-25 TR | IC DRAM 512MBIT PARALLEL 84WBGA | |
W971GG6SB-25 TR | IC DRAM 1GBIT PARALLEL 84WBGA |
Product Description
Product Details
GENERAL DESCRIPTION
The W9725G6JB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words x 4 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W9725G6JB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.
FEATURES
• Power Supply: VDD, VDDQ = 1.8 V ± 0.1V• Double Data Rate architecture: two data transfers per clock cycle
• CAS Latency: 3, 4, 5, 6 and 7
• Burst Length: 4 and 8
• Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
• Edge-aligned with Read data and center-aligned with Write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs (CLK and CLK )
• Data masks (DM) for write data
• Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
• Posted CAS programmable additive latency supported to make command and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
• Auto-precharge operation for read and write bursts
• Auto Refresh and Self Refresh modes
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = Read Latency - 1 (WL = RL - 1)
• Interface: SSTL_18
• Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Winbond Electronics |
Product Category | Memory ICs |
Series | - |
Packaging | Tape & Reel (TR) Alternate Packaging |
Package-Case | 84-TFBGA |
Operating-Temperature | 0°C ~ 85°C (TC) |
Interface | Parallel |
Voltage-Supply | 1.7 V ~ 1.9 V |
Supplier-Device-Package | 84-WBGA (8x12.5) |
Memory Capacity | 256M (16M x 16) |
Memory-Type | DDR2 SDRAM |
Speed | 2.5ns |
Format-Memory | RAM |
Descriptions
Memory IC 84-WBGA (8x12.5)
DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA
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