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M29W320EB70ZE6E IC FLASH 32MBIT PARALLEL 48TFBGA Micron Technology Inc.

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xProduct Details
Memory Type | Non-Volatile | Memory Format | FLASH |
---|---|---|---|
Technology | FLASH - NOR | Memory Size | 32Mbit |
Memory Organization | 4M X 8, 2M X 16 | Memory Interface | Parallel |
Clock Frequency | - | Write Cycle Time - Word, Page | 70ns |
Access Time | 70 Ns | Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 48-TFBGA | Supplier Device Package | 48-TFBGA (6x8) |
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Part Number | Description | |
---|---|---|
M29W160ET90ZA6T TR | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W320EB70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320ET70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W640FB70ZA6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W640FT70ZA6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M28W640FCB70ZB6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M28W640FCB70ZB6F TR | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M28W640FCT70ZB6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29DW323DB70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29DW323DT70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29DW323DT70ZE6F TR | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29DW640F70ZE6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29DW641F60ZE6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W160EB70ZA6E | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W160EB70ZA6F TR | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W160ET70ZA6E | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W160ET70ZA6F TR | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W320DB70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320DB70ZE6F TR | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320DT70ZE6E | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320DT70ZE6F TR | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320EB70ZE6F TR | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W320ET70ZE6F TR | IC FLASH 32MBIT PARALLEL 48TFBGA | |
M29W400BT55ZA1 | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W400DB45ZE6E | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W400DB55ZE6E | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W400DB70ZE6E | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W400DT55ZE6E | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W400DT55ZE6F TR | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W640GB70ZA6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W800DB70ZE6E | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M29W800DB70ZE6F TR | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M29W800DT70ZE6E | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M29W800DT70ZE6F TR | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M29W400DT70ZE6E | IC FLASH 4MBIT PARALLEL 48TFBGA | |
M29W640GB70ZA6EP | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W640GH70ZA6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W640GL70ZA6E | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W640GT70ZA6EP | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W800DB45ZE6E | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M29W800DT45ZE6E | IC FLASH 8MBIT PARALLEL 48TFBGA | |
M28W640HCT70ZB6F TR | IC FLASH 64MBIT 70NS 48TFBGA | |
M29W160EB80ZA3SE TR | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W160ET7AZA6F TR | IC FLASH 16MBIT PARALLEL 48TFBGA | |
M29W640FT70ZA6F TR | IC FLASH 64MBIT PARALLEL 48TFBGA | |
M29W160EB80ZA3SE | IC FLASH 16MBIT PARALLEL 48TFBGA |
Product Description
Product Details
Description
The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block architecture. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.M29W320E has an extra 32 Kword (x16 mode) or 64 Kbyte (x8 mode) block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone.
Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Tray Alternate Packaging |
Package-Case | 48-TFBGA |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.7 V ~ 3.6 V |
Supplier-Device-Package | 48-TFBGA (6x8) |
Memory Capacity | 32M (4M x 8, 2M x 16) |
Memory-Type | FLASH - NOR |
Speed | 70ns |
Format-Memory | FLASH |
Descriptions
FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70ns 48-TFBGA (6x8)
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 70ns 48-Pin TFBGA Tray
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