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MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc.
| Brand Name | Micron Technology Inc. |
|---|---|
| Model Number | MT47H128M4CF-25E:G |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM - DDR2 | Memory Size | 512Mbit |
| Memory Organization | 128M X 4 | Memory Interface | Parallel |
| Clock Frequency | 400 MHz | Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 Ps | Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) | Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA | Supplier Device Package | 60-FBGA (8x10) |
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| Part Number | Description | |
|---|---|---|
| MT47H128M4CF-25E:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H128M8CF-187E:H | IC DRAM 1GBIT PAR 60FBGA | |
| MT47H128M8CF-25:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25E IT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25E:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 AIT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 IT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 L:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8JN-25E:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8JN-3 IT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8JN-3:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H256M4CF-25E:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H256M4CF-3:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E IT:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E L:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47R128M8CF-25:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47R128M8CF-3:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M4CF-187E:G | IC DRAM 512MBIT PAR 60FBGA | |
| MT47H256M4CF-25:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H256M4CF-3 IT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8CF-187E:G | IC DRAM 512MBIT PAR 60FBGA | |
| MT47R256M4CF-25E:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47R256M4CF-3:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25E IT:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25E:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 IT:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E IT:G TR | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E:G TR | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H128M8CF-25E AIT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8CF-25E AIT:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8JN-25E IT:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8JN-25E:G | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 AIT:H TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8CF-3 AAT:H | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H128M8SH-25E AAT:M | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8SH-25E AIT:H | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H128M8SH-187E:M TR | IC DRAM 1GBIT PAR 60FBGA | |
| MT47H64M8SH-25E AAT:H | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H128M8SH-25E AAT:M TR | IC DRAM 1GBIT PARALLEL 60FBGA | |
| MT47H64M8SH-25E AIT:H TR | IC DRAM 512MBIT PARALLEL 60FBGA | |
| MT47H64M8SH-25E AAT:H TR | IC DRAM 512MBIT PARALLEL 60FBGA |
Product Description
Product Details
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banksMT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tray |
| Package-Case | 60-TFBGA |
| Operating-Temperature | 0°C ~ 85°C (TC) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.9 V |
| Supplier-Device-Package | 60-FBGA (8x10) |
| Memory Capacity | 512M (128Mx4) |
| Memory-Type | DDR2 SDRAM |
| Speed | 2.5ns |
| Format-Memory | RAM |
Descriptions
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA (8x10)
DRAM Chip DDR2 SDRAM 512Mbit 128Mx4 1.8V 60-Pin FBGA
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