All Products
MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc.

Contact me for free samples and coupons.
Whatsapp:0086 18588475571
Wechat: 0086 18588475571
Skype: sales10@aixton.com
If you have any concern, we provide 24-hour online help.
xProduct Details
Memory Type | Volatile | Memory Format | DRAM |
---|---|---|---|
Technology | SDRAM - DDR4 | Memory Size | 4Gbit |
Memory Organization | 1G X 4 | Memory Interface | Parallel |
Clock Frequency | 1.2 GHz | Write Cycle Time - Word, Page | - |
Access Time | - | Voltage - Supply | 1.14V ~ 1.26V |
Operating Temperature | 0°C ~ 95°C (TC) | Mounting Type | Surface Mount |
Package / Case | 78-TFBGA | Supplier Device Package | 78-FBGA (9x10.5) |
You can tick the products you need and communicate with us in the message board.
Part Number | Description | |
---|---|---|
MT40A1G4RH-083E:B | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT41K512M8RH-107:E TR | IC DRAM 4GBIT PAR 78FBGA | |
MT41K512M8RH-125 AIT:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 IT:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 M:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-107 IT:E | IC DRAM 4GBIT PAR 78FBGA | |
MT41K512M8RH-107:E | IC DRAM 4GBIT PAR 78FBGA | |
MT41K512M8RH-125 AIT:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 IT:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 M:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-083E:B | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT41K512M8RH-125 V:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 XIT:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 AAT:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 M AIT:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 M AIT:E | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 V:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 XIT:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT41K512M8RH-125 AAT:E TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-062E:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AUT:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E IT:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-083E IT:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A1G4RH-075E:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AAT:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AIT:B TR | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-083E AIT:B | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E AAT:B | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E AUT:B | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E AAT:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E AIT:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E AUT:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-075E IT:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A1G4RH-075E:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-062E:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AAT:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AIT:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E AUT:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A512M8RH-075E:B | IC DRAM 4GBIT PARALLEL 78FBGA | |
MT40A1G4RH-083E:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA | |
MT40A512M8RH-083E:B TR | IC DRAM 4GBIT PAR 1.2GHZ 78FBGA |
Product Description
Product Details
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities only found in larger packages. They are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. With very fast response times, they are also effective in protection from ESD or EFT. Powermite® package features include a full metallic bottom that eliminates the possibility of solder-flux entrapment during assembly. They also provide unique locking tab acting as an integral heat sink. With its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast-rise-time transients.
FEATURES
• Very low profile surface mount package (1.1mm)• Integral heat sink-locking tabs
• Compatible with automatic insertion equipment
• Full metallic bottom eliminates flux entrapment
• Voltage range 5 volts to 170 volts
• Available in both unidirectional or bi-directional (C suffix for bi-directional)
MAXIMUM RATINGS
• Operating Temperature: -55°C to +150°C• Storage Temperature: -55°C to +150°C
• 1500 Watt peak pulse power (10 / 1000 µsec.)
• Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)
• Repetition surge rate (duty factor): 0.01%
• Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint
• Lead and mounting temperature: 260°C for 10 sec
APPLICATIONS / BENEFITS
• Secondary lightning transient protection• Inductive switching transient protection
• Small footprint
• Very low parasitic inductance for minimal voltage overshoot
• Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively and IEC61000-4-5 for surge levels defined herein
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Tray |
Package-Case | 78-TFBGA |
Operating-Temperature | 0°C ~ 95°C (TC) |
Interface | Parallel |
Voltage-Supply | 1.14 V ~ 1.26 V |
Supplier-Device-Package | 78-FBGA (9x10.5) |
Memory Capacity | 4G (1G x 4) |
Memory-Type | DDR4 SDRAM |
Speed | 18ns |
Format-Memory | RAM |
Descriptions
SDRAM - DDR4 Memory IC 4Gb (1G x 4) Parallel 1.2GHz 78-FBGA (9x10.5)
DRAM Chip DDR4 SDRAM 4Gbit 1Gx4 1.2V 78-Pin FBGA
Recommended Products