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IS43LR16200D-6BL-TR IC DRAM 32MBIT PARALLEL 60TFBGA ISSI, Integrated Silicon Solution Inc
| Brand Name | ISSI, Integrated Silicon Solution Inc |
|---|---|
| Model Number | IS43LR16200D-6BL-TR |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM - Mobile LPDDR | Memory Size | 32Mbit |
| Memory Organization | 2M X 16 | Memory Interface | Parallel |
| Clock Frequency | 166 MHz | Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.5 Ns | Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA | Supplier Device Package | 60-TFBGA (8x10) |
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| Part Number | Description | |
|---|---|---|
| IS43LR16200D-6BL-TR | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200D-6BL | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200D-6BLI-TR | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200D-6BLI | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16400C-6BLI-TR | IC DRAM 64MBIT PARALLEL 60TFBGA | |
| IS43LR16400C-6BLI | IC DRAM 64MBIT PARALLEL 60TFBGA | |
| IS43LR16800G-6BL-TR | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16800G-6BLI-TR | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16800G-6BL | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16800G-6BLI | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16160G-6BL-TR | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16160G-6BLI-TR | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16160G-6BL | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16320C-6BL-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16160G-6BLI | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16320C-6BL | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16320C-6BLI-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16320C-6BLI | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320C-6BLA1-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320C-6BLA1 | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320C-6BLA2-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320C-6BLA2 | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16320B-6BLI | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16800F-6BLI | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16160F-6BL | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16160F-6BLI | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16160F-6BLI-TR | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16160F-6BL-TR | IC DRAM 256MBIT PAR 60TFBGA | |
| IS43LR16200C-6BL | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200C-6BLI | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200C-6BLI-TR | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16200C-6BL-TR | IC DRAM 32MBIT PARALLEL 60TFBGA | |
| IS43LR16320B-6BL | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16320B-6BLI-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16320B-6BL-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS43LR16400B-6BLI | IC DRAM 64MBIT PARALLEL 60TFBGA | |
| IS43LR16400B-6BLI-TR | IC DRAM 64MBIT PARALLEL 60TFBGA | |
| IS43LR16800F-6BL | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16800F-6BLI-TR | IC DRAM 128MBIT PAR 60TFBGA | |
| IS43LR16800F-6BL-TR | IC DRAM 128MBIT PAR 60TFBGA | |
| IS46LR16320B-6BLA1 | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320B-6BLA1-TR | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320B-6BLA2 | IC DRAM 512MBIT PAR 60TFBGA | |
| IS46LR16320B-6BLA2-TR | IC DRAM 512MBIT PAR 60TFBGA |
Product Description
Product Details
FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tape & Reel (TR) Alternate Packaging |
| Package-Case | 60-TFBGA |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.95 V |
| Supplier-Device-Package | 60-TFBGA (8x10) |
| Memory Capacity | 32M (2M x 16) |
| Memory-Type | Mobile DDR SDRAM |
| Speed | 166MHz |
| Format-Memory | RAM |
Descriptions
SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
DRAM Chip DDR SDRAM 32Mbit 2Mx16 1.8V 60-Pin TFBGA T/R
DRAM 32M, 1.8V, M-DDR 2Mx16, 166Mhz, RoHS
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