S70FL01GSAGMFI010 IC FLASH 1GBIT SPI/QUAD 16SOIC Infineon Technologies

 

General Description

This document contains information for the S70FL256P device, which is a dual die stack of two S25FL129P die.

Distinctive Characteristics
Architectural Advantages
■ Single Power Supply Operation
– Full voltage range: 2.7 to 3.6V read and write operations
■ Memory Architecture
– Uniform 64 kB sectors
– Top or bottom parameter block (Two 64-kB sectors
broken down into sixteen 4-kB sub-sectors each) for
each Flash die
– Uniform 256 kB sectors (no 4-kB sub-sectors)
– 256-byte page size
■ Program
– Page Program (up to 256 bytes) in 1.5 ms (typical)
– Program operations are on a page by page basis
– Accelerated programming mode via 9V W#/ACC pin
– Quad Page Programming
■ Erase
– Bulk erase function for each Flash die
– Sector erase (SE) command (D8h) for 64 kB and 256 kB
sectors
– Sub-sector erase (P4E) command (20h) for 4 kB sectors
(for uniform 64-kB sector device only)
– Sub-sector erase (P8E) command (40h) for 8 kB sectors
(for uniform 64-kB sector device only)
■ Cycling Endurance
– 100,000 cycles per sector typical
■ Data Retention
– 20 years typical
■ Device ID
– JEDEC standard two-byte electronic signature
– RES command one-byte electronic signature for backward
compatibility
■ One-time programmable (OTP) area on each Flash die for
permanent, secure identification; can be programmed and
locked at the factory or by the customer
■ CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash devices
■ Process Technology
– Manufactured on 0.09 µm MirrorBit® process technology
■ Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 24-ball BGA (6 x 8 mm) package, 5 x 5 pin configuration
(Continue ...)