IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61NLP25618A-200B3LI-TR
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format SRAM
Technology SRAM - Synchronous, SDR Memory Size 4.5Mbit
Memory Organization 256K X 18 Memory Interface Parallel
Clock Frequency 200 MHz Write Cycle Time - Word, Page -
Access Time 3.1 Ns Voltage - Supply 3.135V ~ 3.465V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 165-TBGA Supplier Device Package 165-PBGA (13x15)
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Part Number Description
IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA
IS61NLP25618A-200B3LI IC SRAM 4.5MBIT PARALLEL 165PBGA
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IS61VPS51236A-250B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61NLP25618A-200B3I IC SRAM 4.5MBIT PARALLEL 165PBGA
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IS61LPD102418A-250B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD102418A-250B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-200B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-250B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-250B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-200B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-200B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-250B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-250B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-200B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-200B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-250B3I-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-250B3-TR IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD102418A-200B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD102418A-250B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD102418A-250B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-200B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-250B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPD51236A-250B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-200B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-200B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-250B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD102418A-250B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-200B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-200B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-250B3 IC SRAM 18MBIT PARALLEL 165PBGA
IS61VPD51236A-250B3I IC SRAM 18MBIT PARALLEL 165PBGA
IS61LPS12836A-200B3I IC SRAM 4MBIT PARALLEL 165PBGA
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Part Number Description
Product Description

Product Details

 

DESCRIPTION

The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

 

 

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series IS61NLP25618A
Type Synchronous
Packaging Tape & Reel (TR) Alternate Packaging
Mounting-Style SMD/SMT
Package-Case 165-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3.135 V ~ 3.465 V
Supplier-Device-Package 165-BGA (13x15)
Memory Capacity 4.5M (256K x 18)
Memory-Type SRAM - Synchronous
Speed 200MHz
Data-Rate SDR
Access-Time 3.1 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 256 k x 18
Supply-Current-Max 210 mA
Supply-Voltage-Max 3.465 V
Supply-Voltage-Min 3.135 V
Package-Case BGA-165
Maximum-Clock-Frequency 200 MHz

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Parallel 200MHz 3.1ns 165-BGA (13x15)
SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 3.1ns 165-Pin BGA T/R
SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v