MT29F512G08CKCABH7-6:A TR IC FLASH 512GBIT PAR 152TBGA Micron Technology Inc.

Brand Name Micron Technology Inc.
Model Number MT29F512G08CKCABH7-6:A TR
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NAND (MLC) Memory Size 512Gbit
Memory Organization 64G X 8 Memory Interface Parallel
Clock Frequency 166 MHz Write Cycle Time - Word, Page -
Access Time - Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount
Package / Case 152-TBGA Supplier Device Package 152-TBGA (14x18)
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Part Number Description
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Part Number Description
Product Description

Product Details

 

General Description

Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

 

 

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5

tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

 

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tape & Reel (TR) Alternate Packaging
Package-Case -
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 2.7 V ~ 3.6 V
Supplier-Device-Package -
Memory Capacity 512G (64G x 8)
Memory-Type FLASH - NAND
Speed -
Format-Memory FLASH

Descriptions

FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 166MHz