IS25LP064A-JLLE IC FLASH 64MBIT SPI/QUAD 8WSON ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS25LP064A-JLLE
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 64Mbit
Memory Organization 8M X 8 Memory Interface SPI - Quad I/O, QPI
Clock Frequency 133 MHz Write Cycle Time - Word, Page 800µs
Access Time - Voltage - Supply 2.3V ~ 3.6V
Operating Temperature -40°C ~ 105°C (TA) Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad Supplier Device Package 8-WSON (8x6)
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Part Number Description
Product Description

Product Details

 

GENERAL DESCRIPTION

The IS25LQ020/040 is 2 Mbit / 4 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

 

 

FEATURES

• Single Power Supply Operation
- Low voltage range: 2.3 V - 3.6 V
• Memory Organization
- IS25LQ020: 256K x 8 (2 Mbit)
- IS25LQ040: 512K x 8 (4 Mbit)
• Cost Effective Sector/Block Architecture
- 2Mb / 4Mb : Uniform 4KByte sectors / sixteen uniform 64KByte blocks
• Serial Peripheral Interface (SPI) Compatible
- Supports single-, dual- or quad-output
- Supports SPI Modes 0 and 3
- Maximum 33 MHz clock rate for normal read
- Maximum 104 MHz clock rate for fast read
- Maximum 208MHz clock rate equivalent Dual SPI
- Maximum 400MHz clock rate equivalent Quad SPI
• Byte Program Operation
- Typical 10 us/Byte
• Page Program (up to 256 Bytes) Operation
- Maximum 0.7ms per page program
• Sector, Block or Chip Erase Operation
- Sector Erase (4KB) → 150ms (Typ)
- Block Erase (64KB) → 500ms (Typ)
- Chip Erase → 0.5s (2Mb)
- Chip Erase → 1s (4Mb)
• Low Power Consumption
- Max 12 mA active read current
- Max 20 mA program/erase current
- Max 50 uA standby current
• Hardware Write Protection
- Protect and unprotect the device from write operation by Write Protect (WP#) Pin
• Software Write Protection
- The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only
• High Product Endurance
- Guaranteed 100,000 program/erase cycles per single sector
- Minimum 20 years data retention
• Industrial Standard Pin-out and Package
- 8-pin SOIC 208mil
- 8-pin SOIC 150mil
- 8-pin VVSOP 150mil
- 8-pin WSON (5x6mm)
- 8-pin USON (2x3mm)
- KGD (Call Factory)
- Lead-free (Pb-free) package
- Automotive Temperature Ranges Available
• Additional 256-byte Security information onetime programmable (OTP) area
• Special protect function
- Safe guard function (Appendix 1)
- Sector unlock function (Appendix

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Manufacturer ISSI
Product-Category Flash Memory
RoHS Details
Mounting-Style SMD/SMT
Package-Case WSON-8
Memory-Size 64 Mbit
Interface-Type Serial
Memory-Type Flash
Speed 133 MHz
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 2.3 V
Supply-Current-Max 13 mA
Operating-Temperature-Range - 40 C to + 105 C
Architecture Block Uniform Sector
Brand ISSI
Data-Bus-Width 8 bit
Maximum-Clock-Frequency 133 MHz
Organization 8 M x 8
Timing-Type Synchronous
Unit-Weight 0.000384 oz

Descriptions

FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O, QPI 133MHz 8-WSON (8x6)
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 64M-bit 8M x 8 8ns 8-Pin WSON EP T/R/Tray
Flash Memory 64Mb QPI/QSPI, WSON, RoHS, ET