IS43TR85120A-15HBL-TR IC DRAM 4GBIT PAR 78TWBGA ISSI, Integrated Silicon Solution Inc

 

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system frequency up to 1066 MHz
● 8 internal banks for concurrent operation
● 8n-Bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
● Write Leveling
● Up to 200 MHz in DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)