5962-3829407MXA IC SRAM 64KBIT PARALLEL 28CDIP Renesas Electronics America Inc

Brand Name Renesas Electronics America Inc
Model Number 5962-3829407MXA
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format SRAM
Technology SRAM - Asynchronous Memory Size 64Kbit
Memory Organization 8K X 8 Memory Interface Parallel
Clock Frequency - Write Cycle Time - Word, Page -
Access Time - Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -55°C ~ 125°C (TA) Mounting Type Through Hole
Package / Case 28-CDIP (0.600", 15.24mm) Supplier Device Package 28-CDIP
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Part Number Description
5962-3829407MXA IC SRAM 64KBIT PARALLEL 28CDIP
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71256S70DB IC SRAM 256KBIT PARALLEL 28CDIP
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71256L85DB IC SRAM 256KBIT PARALLEL 28CDIP
71256S25DB IC SRAM 256KBIT PARALLEL 28CDIP
71256S35DB IC SRAM 256KBIT PARALLEL 28CDIP
71256S45DB IC SRAM 256KBIT PARALLEL 28CDIP
7164L20DB IC SRAM 64KBIT PARALLEL 28CDIP
7164L25DB IC SRAM 64KBIT PARALLEL 28CDIP
7164S20DB IC SRAM 64KBIT PARALLEL 28CDIP
7164S25DB IC SRAM 64KBIT PARALLEL 28CDIP
7164S45DB IC SRAM 64KBIT PARALLEL 28CDIP
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Part Number Description
Product Description

Product Details

 

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 μA.

 

 

Features

• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
– 300 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout

 

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series 5962-38294
Type Asynchronous
Packaging Tube
Mounting-Style Through Hole
Package-Case 28-CDIP (0.600", 15.24mm)
Operating-Temperature -55°C ~ 125°C (TA)
Interface Parallel
Voltage-Supply 4.5 V ~ 5.5 V
Supplier-Device-Package 28-CDIP
Memory Capacity 64K (8K x 8)
Memory-Type SRAM - Asynchronous
Speed -
Access-Time 70 ns
Format-Memory RAM
Maximum Operating Temperature + 125 C
Operating temperature range - 55 C
Interface-Type Parallel
Organization 8 k x 8
Part-#-Aliases 5962-38294 5962-3829407MXA
Supply-Voltage-Max 5.5 V
Supply-Voltage-Min 4.5 V
Package-Case CDIP-28

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
AS6C6264A-70PIN
Memory
Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-28 Alliance Memory Inc 5962-3829407MXA vs AS6C6264A-70PIN
FT6264L-70DWMLF
Memory
Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, 0.600 INCH, ROHS COMPLIANT, CERAMIC, DIP-28 Force Technologies Ltd 5962-3829407MXA vs FT6264L-70DWMLF
V62C51864L-70P
Memory
Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Mosel Vitelic Corporation 5962-3829407MXA vs V62C51864L-70P
5962-3829407MXA
Memory
Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, CERAMIC, DIP-28 Motorola Semiconductor Products 5962-3829407MXA vs 5962-3829407MXA
AS6C6264A-70PCN
Memory
Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-28 Alliance Memory Inc 5962-3829407MXA vs AS6C6264A-70PCN
FT6264L-70DWMBLF
Memory
Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, 0.600 INCH, ROHS COMPLIANT, CERAMIC, DIP-28 Force Technologies Ltd 5962-3829407MXA vs FT6264L-70DWMBLF
IMS1630LS-70M
Memory
8KX8 STANDARD SRAM, 70ns, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 STMicroelectronics 5962-3829407MXA vs IMS1630LS-70M

Descriptions

SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parallel 28-CerDip
SRAM 64K Asynchronous 8K x 8 SRAM