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MT47H16M16BG-37E:B TR IC SDRAM 256MBIT 266MHZ 84FBGA Micron Technology Inc.
| Brand Name | Micron Technology Inc. |
|---|---|
| Model Number | MT47H16M16BG-37E:B TR |
| Minimum Order Quantity | 1 |
| Price | Based on current price |
| Packaging Details | anti-static bag & cardboard box |
| Delivery Time | 3-5 work days |
| Payment Terms | T/T |
| Supply Ability | In stock |
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xProduct Details
| Memory Type | Volatile | Memory Format | DRAM |
|---|---|---|---|
| Technology | SDRAM - DDR2 | Memory Size | 256Mbit |
| Memory Organization | 16M X 16 | Memory Interface | Parallel |
| Clock Frequency | 267 MHz | Write Cycle Time - Word, Page | 15ns |
| Access Time | 500 Ps | Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) | Mounting Type | Surface Mount |
| Package / Case | 84-FBGA | Supplier Device Package | 84-FBGA (8x14) |
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| Part Number | Description | |
|---|---|---|
| MT47H16M16BG-37E:B TR | IC SDRAM 256MBIT 266MHZ 84FBGA | |
| MT47H16M16BG-3:B TR | IC DRAM 256MBIT PARALLEL 84FBGA | |
| MT47H16M16BG-37V:B | IC DRAM 256MBIT PAR 84FBGA | |
| MT47H32M16CC-37E IT:B | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-37E IT:B TR | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-37E L:B | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-37E L:B TR | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-3E:B | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-3E:B TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E IT:B | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E IT:B TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E L:B | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E L:B TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H16M16BG-3E:B | IC DRAM 256MBIT PARALLEL 84FBGA | |
| MT47H16M16BG-5E:B | IC DRAM 256MBIT PARALLEL 84FBGA | |
| MT47H16M16BG-5E:B TR | IC DRAM 256MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-37E:B | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-37E:B TR | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16CC-3:B | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E:B | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-5E:B TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16CC-3:B TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-3:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H16M16BG-3 IT:B TR | IC DRAM 256MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-37E:D TR | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16BN-25E:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-25:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-5E IT:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-37E IT:D TR | IC DRAM 512MBIT PAR 84FBGA | |
| MT47H32M16BN-3 IT:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-25E IT:D TR | IC DRAM 512MBIT PARALLEL 84FBGA | |
| MT47H32M16BN-5E:D TR | IC DRAM 512MBIT PARALLEL 84FBGA |
Product Description
Product Details
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banksMT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | |
| Package-Case | 84-FBGA |
| Operating-Temperature | 0°C ~ 85°C (TC) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.9 V |
| Supplier-Device-Package | 84-FBGA (8x14) |
| Memory Capacity | 256M (16M x 16) |
| Memory-Type | DDR2 SDRAM |
| Speed | 3.75ns |
| Format-Memory | RAM |
Descriptions
SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 267MHz 500ps 84-FBGA (8x14)
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