MT47H128M4BT-37E:A TR IC DRAM 512MBIT PAR 92FBGA Micron Technology Inc.

Brand Name Micron Technology Inc.
Model Number MT47H128M4BT-37E:A TR
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR2 Memory Size 512Mbit
Memory Organization 128M X 4 Memory Interface Parallel
Clock Frequency 267 MHz Write Cycle Time - Word, Page 15ns
Access Time 500 Ps Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount
Package / Case 92-TFBGA Supplier Device Package 92-FBGA (11x19)
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Part Number Description
Product Description

Product Details

 

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks

 

 

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification

 

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
Packaging Cut Tape (CT)
Package-Case92-FBGA
Operating-Temperature 0°C ~ 85°C (TC)
InterfaceParallel
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package-
Memory Capacity 512M (128Mx4)
Memory-Type DDR2 SDRAM
Speed3.75ns
Format-MemoryRAM

Descriptions

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267MHz 500ps 92-FBGA (11x19)