IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS41LV16100B-50KL
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format DRAM
Technology DRAM - EDO Memory Size 16Mbit
Memory Organization 1M X 16 Memory Interface Parallel
Clock Frequency - Write Cycle Time - Word, Page -
Access Time 25 Ns Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount
Package / Case 42-BSOJ (0.400", 10.16mm Width) Supplier Device Package 42-SOJ
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Part Number Description
IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-50KL-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-50KLI IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-50KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-60KL IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-60KL-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-60KLI IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100B-60KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-50KL IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-50KL-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-50KLI IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-50KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-60KL IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-60KL-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105B-60KLI IC DRAM 16MBIT PARALLEL 42SOJ
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IS41LV16100C-50KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
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IS41LV16100D-50KLI IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16100D-50KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105D-50KLI IC DRAM 16MBIT PARALLEL 42SOJ
IS41LV16105D-50KLI-TR IC DRAM 16MBIT PARALLEL 42SOJ
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Part Number Description
Product Description

Product Details

 

DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

 

 

FEATURES

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available

 

Specifications

AttributeAttribute Value
ManufacturerISSI
Product CategoryIC Chips
Series-
Packaging Tube
Package-Case42-BSOJ (0.400", 10.16mm)
Operating-Temperature 0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package42-SOJ
Memory Capacity 16M (1M x 16)
Memory-Type DRAM - EDO
Speed50ns
Format-MemoryRAM

Descriptions

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ