S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies

Brand Name Infineon Technologies
Model Number S29CD016J0MFAM010
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 16Mbit
Memory Organization 512K X 32 Memory Interface Parallel
Clock Frequency 56 MHz Write Cycle Time - Word, Page 60ns
Access Time 54 Ns Voltage - Supply 1.65V ~ 2.75V
Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount
Package / Case 80-LBGA Supplier Device Package 80-FBGA (13x11)
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Part Number Description
S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA
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S29CL032J0RFFM010 IC FLASH 32MBIT PAR 75MHZ 80FBGA
S29CD016J0MFAM012 IC FLASH 16MBIT PAR 56MHZ 80FBGA
S29CD016J0PFFM113 IC FLASH 16MBIT PARALLEL 80FBGA
S29CD032J0RFAM033 IC FLASH 32MBIT PAR 75MHZ 80FBGA
S29CL016J0PFFM033 IC FLASH 16MBIT PARALLEL 80FBGA
S29CL032J0RFFM033 IC FLASH 32MBIT PAR 75MHZ 80FBGA
S29CD016J0PFFI000 IC FLASH 16MBIT PARALLEL 80FBGA
S29CD016J0PFFM110 IC FLASH 16MBIT PARALLEL 80FBGA
S29CD032J0PFFI010 IC FLASH 32MBIT PARALLEL 80FBGA
S29CD032J0PFFM010 IC FLASH 32MBIT PARALLEL 80FBGA
S29CD032J0RFAM010 IC FLASH 32MBIT PAR 75MHZ 80FBGA
S29CD032J0RFAM030 IC FLASH 32MBIT PAR 75MHZ 80FBGA
S29CD032J1JFAM010 IC FLASH 32MBIT PAR 80FBGA
S29CL032J0MFAI030 IC FLASH 32MBIT PAR 56MHZ 80FBGA
S29CL032J0PFFM000 IC FLASH 32MBIT PARALLEL 80FBGA
S29CD016J1MFAM112 IC FLASH 16MBIT PAR 56MHZ 80FBGA
S29CL016J0PFFM030 IC FLASH 16MBIT PARALLEL 80FBGA
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Part Number Description
Product Description

Product Details

 

General Description

The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.

 

 

Distinctive Characteristics

Architecture Advantages
■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories

 

 

Performance Characteristics

■ High performance read access
— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals

 

 

Software Features

■ Persistent Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion

 

 

Hardware Features

■ Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die

 

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series CD-J
Type Boot Block
Packaging Tray
Mounting-Style SMD/SMT
Operating-Temperature-Range - 40 C to + 125 C
Package-Case 80-LBGA
Operating-Temperature -40°C ~ 125°C (TA)
Interface Parallel
Voltage-Supply 1.65 V ~ 2.75 V
Supplier-Device-Package 80-Fortified BGA (13x11)
Memory Capacity 16M (512K x 32)
Memory-Type FLASH - NOR
Speed 56MHz
Architecture Sector
Format-Memory FLASH
Standard Common Flash Interface (CFI)
Interface-Type Parallel
Organization 512 k x 32
Supply-Current-Max 90 mA
Data-Bus-Width 32 bit
Supply-Voltage-Max 2.75 V
Supply-Voltage-Min 2.5 V
Package-Case FBGA-80
Maximum-Clock-Frequency 56 MHz
Timing-Type Asynchronous Synchronous
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
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Descriptions

FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-FBGA (13x11)
NOR Flash Parallel 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin Fortified BGA Tray
Flash Memory