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S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies

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xProduct Details
Memory Type | Non-Volatile | Memory Format | FLASH |
---|---|---|---|
Technology | FLASH - NOR | Memory Size | 16Mbit |
Memory Organization | 512K X 32 | Memory Interface | Parallel |
Clock Frequency | 56 MHz | Write Cycle Time - Word, Page | 60ns |
Access Time | 54 Ns | Voltage - Supply | 1.65V ~ 2.75V |
Operating Temperature | -40°C ~ 125°C (TA) | Mounting Type | Surface Mount |
Package / Case | 80-LBGA | Supplier Device Package | 80-FBGA (13x11) |
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Part Number | Description | |
---|---|---|
S29CD016J0MFAM010 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CD016J0MFAM113 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CD016J0JFAM010 | IC FLASH 16MBIT PAR 80FBGA | |
S29CD016J0PFAM010 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CD016J0MFAM013 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CL016J1MFFM030 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CD032J1JFFM010 | IC FLASH 32MBIT PAR 80FBGA | |
S29CD016J0PFAM010 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CL032J0RFFM010 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
S29CD016J0MFAM012 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CD016J0PFFM113 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CD032J0RFAM033 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
S29CL016J0PFFM033 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CL032J0RFFM033 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
S29CD016J0PFFI000 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CD016J0PFFM110 | IC FLASH 16MBIT PARALLEL 80FBGA | |
S29CD032J0PFFI010 | IC FLASH 32MBIT PARALLEL 80FBGA | |
S29CD032J0PFFM010 | IC FLASH 32MBIT PARALLEL 80FBGA | |
S29CD032J0RFAM010 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
S29CD032J0RFAM030 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | |
S29CD032J1JFAM010 | IC FLASH 32MBIT PAR 80FBGA | |
S29CL032J0MFAI030 | IC FLASH 32MBIT PAR 56MHZ 80FBGA | |
S29CL032J0PFFM000 | IC FLASH 32MBIT PARALLEL 80FBGA | |
S29CD016J1MFAM112 | IC FLASH 16MBIT PAR 56MHZ 80FBGA | |
S29CL016J0PFFM030 | IC FLASH 16MBIT PARALLEL 80FBGA |
Product Description
Product Details
General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.
Distinctive Characteristics
Architecture Advantages■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories
Performance Characteristics
■ High performance read access— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals
Software Features
■ Persistent Sector Protection— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
■ Program Suspend/Resume & Erase Suspend/Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Cypress Semiconductor |
Product Category | Memory ICs |
Series | CD-J |
Type | Boot Block |
Packaging | Tray |
Mounting-Style | SMD/SMT |
Operating-Temperature-Range | - 40 C to + 125 C |
Package-Case | 80-LBGA |
Operating-Temperature | -40°C ~ 125°C (TA) |
Interface | Parallel |
Voltage-Supply | 1.65 V ~ 2.75 V |
Supplier-Device-Package | 80-Fortified BGA (13x11) |
Memory Capacity | 16M (512K x 32) |
Memory-Type | FLASH - NOR |
Speed | 56MHz |
Architecture | Sector |
Format-Memory | FLASH |
Standard | Common Flash Interface (CFI) |
Interface-Type | Parallel |
Organization | 512 k x 32 |
Supply-Current-Max | 90 mA |
Data-Bus-Width | 32 bit |
Supply-Voltage-Max | 2.75 V |
Supply-Voltage-Min | 2.5 V |
Package-Case | FBGA-80 |
Maximum-Clock-Frequency | 56 MHz |
Timing-Type | Asynchronous Synchronous |
Manufacturer Part# | Description | Manufacturer | Compare |
S29CD016J1JFFM112 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM112 |
S29CD016J0JFFI013 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI013 |
S29CD016J1JFFM113 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM113 |
S29CD016J1JFFM032 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM032 |
S29CD016J0MFFM133 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM133 |
S29CD016J1JFFM030 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM030 |
S29CD016J0JFFI010 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI010 |
S29CD016J0MFFM130 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM130 |
S29CD016J0MFFI033 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFI033 |
S29CD016J0MFFM132 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM132 |
Descriptions
FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-FBGA (13x11)
NOR Flash Parallel 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin Fortified BGA Tray
Flash Memory
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