S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

Brand Name Cypress Semiconductor Corp
Model Number S29WS064RABBHW010
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 64Mbit
Memory Organization 4M X 16 Memory Interface Parallel
Clock Frequency 108 MHz Write Cycle Time - Word, Page 60ns
Access Time 80 Ns Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -25°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 84-VFBGA Supplier Device Package 84-FBGA (11.6x8)
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Part Number Description
S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA
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Part Number Description
Product Description

Product Details

 

General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

 

 

Distinctive Characteristics

■ Single 1.8 V read/program/erase (1.70–1.95 V)
■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
■ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
(typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
standard
■ Hardware (WP#) protection of top and bottom
sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
Sector Protection
■ Write operation status bits indicate program and
erase operation completion
■ Suspend and Resume commands for Program and
Erase operations
■ Unlock Bypass program command to reduce
programming time
■ Synchronous or Asynchronous program operation,
independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)

 

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series WS-R
Packaging Tray
Mounting-Style SMD/SMT
Operating-Temperature-Range - 25 C to + 85 C
Package-Case *
Operating-Temperature -25°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 1.7 V ~ 1.95 V
Supplier-Device-Package *
Memory Capacity 64M (4M x 16)
Memory-Type FLASH - NOR
Speed 108MHz
Architecture Sector
Format-Memory FLASH
Standard Common Flash Interface (CFI)
Interface-Type Parallel
Organization 4 M x 16
Supply-Current-Max 44 mA
Data-Bus-Width 16 bit
Supply-Voltage-Max 1.95 V
Supply-Voltage-Min 1.7 V
Package-Case FBGA-84
Maximum-Clock-Frequency 108 MHz
Timing-Type Asynchronous Synchronous
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
S29WS064R0SBHW000
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0SBHW000
S29WS064R0SBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0SBHW013
S29WS064RABBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064RABBHW010
S29WS064R0SBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0SBHW010
S29WS064R0PBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0PBHW010
S29WS064R0SBHW003
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0SBHW003
S29WS064RABBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064RABBHW013
S29WS064R0PBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0PBHW013
S29WS064RABBHW003
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064RABBHW003
S29WS064R0PBHW000
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 Cypress Semiconductor S29WS064RABBHW010 vs S29WS064R0PBHW000

Descriptions

FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA (11.6x8)
NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray
Flash Memory