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S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

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xProduct Details
Memory Type | Non-Volatile | Memory Format | FLASH |
---|---|---|---|
Technology | FLASH - NOR | Memory Size | 64Mbit |
Memory Organization | 4M X 16 | Memory Interface | Parallel |
Clock Frequency | 108 MHz | Write Cycle Time - Word, Page | 60ns |
Access Time | 80 Ns | Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -25°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 84-VFBGA | Supplier Device Package | 84-FBGA (11.6x8) |
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Part Number | Description | |
---|---|---|
S29WS064RABBHW010 | IC FLASH 64MBIT PARALLEL 84FBGA | |
S29WS064RABBHI000 | IC FLASH 64MBIT PARALLEL 84FBGA | |
S29WS064RABBHI010 | IC FLASH 64MBIT PARALLEL 84FBGA | |
S29WS128P0PBFW000 | IC FLASH 128MBIT PARALLEL 84FBGA | |
S29WS128P0SBFW000 | IC FLASH 128MBIT PARALLEL 84FBGA | |
S29WS256P0PBFW000 | IC FLASH 256MBIT PARALLEL 84FBGA | |
S29WS256P0SBFW000 | IC FLASH 256MBIT PARALLEL 84FBGA | |
S29WS512P0PBFW000 | IC FLASH 512MBIT PARALLEL 84FBGA | |
S29WS512P0SBFW000 | IC FLASH 512MBIT PARALLEL 84FBGA | |
S29WS256P0LBFW000 | IC FLASH 256MBIT PAR 84FBGA | |
S29WS128P0PBFW003 | IC FLASH 128MBIT PARALLEL 84FBGA | |
S29WS256P0SBFW002 | IC FLASH 256MBIT PARALLEL 84FBGA | |
S29WS064RABBHW000 | IC FLASH 64MBIT PARALLEL 84FBGA | |
S29WS064RABBHW010 | IC FLASH 64MBIT PARALLEL 84FBGA | |
S29WS128P0PBAW000 | IC FLASH 128MBIT PARALLEL 84FBGA | |
S29WS128PABBFW000 | IC FLASH 128MBIT PAR 84FBGA | |
S29WS256PABBAW000 | IC FLASH 256MBIT PAR 84FBGA | |
S29WS256PABBFW000 | IC FLASH 256MBIT PAR 84FBGA | |
S29WS512PABBFW000 | IC FLASH 512MBIT PAR 84FBGA | |
S29WS256R0SBHW000 | IC FLASH 256MBIT PAR 84FBGA | |
S29WS256RAABHW000 | IC FLASH 256MBIT PAR 84FBGA | |
S29WS256RAABHW000E | IC FLASH 256MBIT PAR 84FBGA | |
S29WS256RAABHW200E | IC FLASH 256MBIT PAR 84FBGA | |
S29WS512R0SBHW200E | IC FLASH 512MBIT PAR 84FBGA | |
S29WS512R0SBHW000 | IC FLASH 512MBIT PAR 84FBGA | |
S29WS512R0SBHW200 | IC FLASH 512MBIT PAR 84FBGA |
Product Description
Product Details
General Description
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
Distinctive Characteristics
■ Single 1.8 V read/program/erase (1.70–1.95 V)■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
■ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
(typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
standard
■ Hardware (WP#) protection of top and bottom
sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
Sector Protection
■ Write operation status bits indicate program and
erase operation completion
■ Suspend and Resume commands for Program and
Erase operations
■ Unlock Bypass program command to reduce
programming time
■ Synchronous or Asynchronous program operation,
independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Cypress Semiconductor |
Product Category | Memory ICs |
Series | WS-R |
Packaging | Tray |
Mounting-Style | SMD/SMT |
Operating-Temperature-Range | - 25 C to + 85 C |
Package-Case | * |
Operating-Temperature | -25°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 1.7 V ~ 1.95 V |
Supplier-Device-Package | * |
Memory Capacity | 64M (4M x 16) |
Memory-Type | FLASH - NOR |
Speed | 108MHz |
Architecture | Sector |
Format-Memory | FLASH |
Standard | Common Flash Interface (CFI) |
Interface-Type | Parallel |
Organization | 4 M x 16 |
Supply-Current-Max | 44 mA |
Data-Bus-Width | 16 bit |
Supply-Voltage-Max | 1.95 V |
Supply-Voltage-Min | 1.7 V |
Package-Case | FBGA-84 |
Maximum-Clock-Frequency | 108 MHz |
Timing-Type | Asynchronous Synchronous |
Manufacturer Part# | Description | Manufacturer | Compare |
S29WS064R0SBHW000 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0SBHW000 |
S29WS064R0SBHW013 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0SBHW013 |
S29WS064RABBHW010 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064RABBHW010 |
S29WS064R0SBHW010 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0SBHW010 |
S29WS064R0PBHW010 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0PBHW010 |
S29WS064R0SBHW003 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0SBHW003 |
S29WS064RABBHW013 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064RABBHW013 |
S29WS064R0PBHW013 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0PBHW013 |
S29WS064RABBHW003 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064RABBHW003 |
S29WS064R0PBHW000 Memory |
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84 | Cypress Semiconductor | S29WS064RABBHW010 vs S29WS064R0PBHW000 |
Descriptions
FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA (11.6x8)
NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray
Flash Memory
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