IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61DDB21M18A-300B4L
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

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Product Details
Memory Type Volatile Memory Format SRAM
Technology SRAM - Synchronous, DDR II Memory Size 18Mbit
Memory Organization 1M X 18 Memory Interface Parallel
Clock Frequency 300 MHz Write Cycle Time - Word, Page -
Access Time - Voltage - Supply 1.71V ~ 1.89V
Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount
Package / Case 165-LBGA Supplier Device Package 165-LFBGA (13x15)
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Part Number Description
IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA
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Part Number Description
Product Description

Product Details

 

DESCRIPTION

The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray
Package-Case 165-LBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Common I/O
Voltage-Supply 1.71 V ~ 1.89 V
Supplier-Device-Package 165-LFBGA (13x15)
Memory Capacity 18M (1M x 18)
Memory-Type SRAM - Synchronous, DDR II
Speed 300MHz
Format-Memory RAM

Descriptions

SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18) Parallel 300MHz 165-LFBGA (13x15)
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
SRAM 18Mb, 1M x 18 DDR-II Sync SRAM