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AS4C16M32MD1-5BCN IC DRAM 512MBIT PARALLEL 90FBGA Alliance Memory, Inc.

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xProduct Details
Memory Type | Volatile | Memory Format | DRAM |
---|---|---|---|
Technology | SDRAM - Mobile LPDDR | Memory Size | 512Mbit |
Memory Organization | 16M X 32 | Memory Interface | Parallel |
Clock Frequency | 200 MHz | Write Cycle Time - Word, Page | 15ns |
Access Time | 5 Ns | Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -25°C ~ 85°C (TJ) | Mounting Type | Surface Mount |
Package / Case | 90-VFBGA | Supplier Device Package | 90-FBGA (8x13) |
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Part Number | Description | |
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AS4C16M32MD1-5BCN | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C16M32MSA-6BIN | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C64M32MD1-5BCN | IC DRAM 2GBIT PARALLEL 90FBGA | |
AS4C32M32MD1A-5BIN | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C16M32MD1-5BCNTR | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C4M32MSA-6BINTR | IC DRAM 128MBIT PARALLEL 90FBGA | |
AS4C16M32MD1-5BINTR | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C4M32MSA-6BIN | IC DRAM 128MBIT PARALLEL 90FBGA | |
AS4C16M32MD1-5BIN | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C8M32MSA-6BINTR | IC DRAM 256MBIT PARALLEL 90FBGA | |
AS4C16M32MSA-6BINTR | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C8M32MSA-6BIN | IC DRAM 256MBIT PARALLEL 90FBGA | |
AS4C32M32MD1A-5BINTR | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C64M32MD1-5BCNTR | IC DRAM 2GBIT PARALLEL 90FBGA | |
AS4C64M32MD1-5BINTR | IC DRAM 2GBIT PARALLEL 90FBGA | |
AS4C64M32MD1-5BIN | IC DRAM 2GBIT PARALLEL 90FBGA | |
AS4C32M32MD1-5BCN | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C32M32MD1-5BCNTR | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C32M32MD1-5BIN | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C32M32MD1-5BINTR | IC DRAM 1GBIT PARALLEL 90FBGA | |
AS4C16M32MS-7BCN | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C16M32MS-6BIN | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C16M32MS-6BINTR | IC DRAM 512MBIT PARALLEL 90FBGA | |
AS4C16M32MS-7BCNTR | IC DRAM 512MBIT PARALLEL 90FBGA |
Product Description
Product Details
Features
• Organization: 1,048,576 words × 4 bits• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Alliance Memory, Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Tray Alternate Packaging |
Package-Case | 90-VFBGA |
Operating-Temperature | -25°C ~ 85°C (TJ) |
Interface | Parallel |
Voltage-Supply | 1.7 V ~ 1.95 V |
Supplier-Device-Package | 90-FBGA (8x13) |
Memory Capacity | 512M (16M x 32) |
Memory-Type | Mobile DDR SDRAM |
Speed | 200MHz |
Format-Memory | RAM |
Descriptions
SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Parallel 200MHz 5ns 90-FBGA (8x13)
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
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