CYD36S18V18-167BGXC IC SRAM 36MBIT PAR 484PBGA Cypress Semiconductor Corp

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xMemory Type | Volatile | Memory Format | SRAM |
---|---|---|---|
Technology | SRAM - Dual Port, Synchronous | Memory Size | 36Mbit |
Memory Organization | 2M X 18 | Memory Interface | Parallel |
Clock Frequency | 167 MHz | Write Cycle Time - Word, Page | - |
Access Time | 4 Ns | Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
Package / Case | 484-FBGA | Supplier Device Package | 484-PBGA (27x27) |
Part Number | Description | |
---|---|---|
CYD36S18V18-167BGXC | IC SRAM 36MBIT PAR 484PBGA | |
CYD09S72V18-200BGXI | IC SRAM 9MBIT PARALLEL 484PBGA | |
CYD18S72V18-167BGI | IC SRAM 18MBIT PAR 484PBGA | |
CYD18S72V18-167BGC | IC SRAM 18MBIT PAR 484PBGA | |
CYD18S72V18-167BGXC | IC SRAM 18MBIT PAR 484PBGA | |
CYD36S36V18-200BGXC | IC SRAM 36MBIT PARALLEL 484PBGA | |
CYD36S72V18-167BGXI | IC SRAM 36MBIT PAR 484PBGA | |
CYD36S72V18-200BGXC | IC SRAM 36MBIT PARALLEL 484PBGA | |
CYD36S18V18-167BGXI | IC SRAM 36MBIT PARALLEL 484FBGA | |
CYD18S72V18-200BGI | IC SRAM 18MBIT PARALLEL 484PBGA | |
CYD18S72V18-200BGXI | IC SRAM 18MBIT PARALLEL 484PBGA | |
CYD09S72V18-200BGXI | IC SRAM 9MBIT PARALLEL 484PBGA | |
CYD36S18V18-167BGXC | IC SRAM 36MBIT PAR 484PBGA | |
CYD36S18V18-200BGXC | IC SRAM 36MBIT PARALLEL 484PBGA | |
CYD36S36V18-167BGXC | IC SRAM 36MBIT PAR 484PBGA | |
CYD36S36V18-167BGXI | IC SRAM 36MBIT PAR 484PBGA | |
CYD36S36V18-200BGXC | IC SRAM 36MBIT PARALLEL 484PBGA | |
CYD36S72V18-167BGXC | IC SRAM 36MBIT PAR 484PBGA | |
CYD36S72V18-167BGXI | IC SRAM 36MBIT 167MHZ 484FBGA | |
CYD36S72V18-200BGXC | IC SRAM 36MBIT PARALLEL 484PBGA | |
CYD18S72V18-167BGC | IC SRAM 18MBIT PAR 484PBGA | |
CYD18S72V18-167BGXC | IC SRAM 18MBIT PAR 484PBGA | |
CYD18S72V18-167BGI | IC SRAM 18MBIT PAR 484PBGA |
Product Details
Axial Leaded Precision Resistors
The Holco range of Precision Metal Film Resistors meets the requirement for economically priced components for industrial and military applications. The manufacturing facility utilises closely controlled production processes including the sputter coating of metal alloy films to ceramic substrates, and laser spiralling to achieve close tolerance and high stability resistors. An epoxy coating is applied for environmental and mechanical protection. Commercially the Series is available in two case sizes, from 1 ohm to 4M ohms, tolerances from 0.05% to 1% and TCRs from 5ppm/°C to 100ppm/°C. Offered with release to BS CECC 40101 004, 030 and 804 the H8 is available via distribution.
Key Features
■ Ultra Precision - Down To 0.05%■ Matched Sets Available To 2ppm/°C
■ High Pulse Withstand
■ Low Reactance
■ Low TCR - Down To 5ppm/°C
■ Long Term Stability
■ Up To 1 Watt At 70°C
■ Released To CECC 40101 004, 030 And 804
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Cypress Semiconductor |
Product Category | Memory ICs |
Series | - |
Packaging | Tray |
Package-Case | 484-FBGA |
Operating-Temperature | 0°C ~ 70°C (TA) |
Interface | Parallel |
Voltage-Supply | 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V |
Supplier-Device-Package | 484-FBGA (23x23) |
Memory Capacity | 36M (2M x 18) |
Memory-Type | SRAM - Dual Port, Synchronous |
Speed | 167MHz |
Format-Memory | RAM |