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IS61WV5128BLL-10BLI IC SRAM 4MBIT PARALLEL 36TFBGA ISSI, Integrated Silicon Solution Inc

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xProduct Details
Memory Type | Volatile | Memory Format | SRAM |
---|---|---|---|
Technology | SRAM - Asynchronous | Memory Size | 4Mbit |
Memory Organization | 512K X 8 | Memory Interface | Parallel |
Clock Frequency | - | Write Cycle Time - Word, Page | 10ns |
Access Time | 10 Ns | Voltage - Supply | 2.4V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 36-TFBGA | Supplier Device Package | 36-TFBGA (6x8) |
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Part Number | Description | |
---|---|---|
IS61WV5128BLL-10BLI | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV2568BLL-55BLI-TR | IC SRAM 2MBIT PARALLEL 36TFBGA | |
IS62WV2568BLL-55BLI | IC SRAM 2MBIT PARALLEL 36TFBGA | |
IS61WV5128BLL-10BLI-TR | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128BLL-55BLI-TR | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128BLL-55BLI | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS61LV5128AL-10BI | IC SRAM 4MBIT PARALLEL 36MINIBGA | |
IS61LV5128AL-10BI-TR | IC SRAM 4MBIT PARALLEL 36MINIBGA | |
IS61LV5128AL-10BLI | IC SRAM 4MBIT PARALLEL 36MINIBGA | |
IS61LV5128AL-10BLI-TR | IC SRAM 4MBIT PARALLEL 36MINIBGA | |
IS62WV2568BLL-70BI | IC SRAM 2MBIT PARALLEL 36TFBGA | |
IS62WV2568BLL-70BI-TR | IC SRAM 2MBIT PARALLEL 36TFBGA | |
IS62WV5128BLL-55BI | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128BLL-55BI-TR | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS63LV1024L-12BI | IC SRAM 1MBIT PARALLEL 36MINIBGA | |
IS63LV1024L-12BI-TR | IC SRAM 1MBIT PARALLEL 36MINIBGA | |
IS63LV1024L-12BLI | IC SRAM 1MBIT PARALLEL 36MINIBGA | |
IS63LV1024L-12BLI-TR | IC SRAM 1MBIT PARALLEL 36MINIBGA | |
IS62WV5128DBLL-45BLI | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128DBLL-45BLI-TR | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128DBLL-45BI | IC SRAM 4MBIT PARALLEL 36TFBGA | |
IS62WV5128DBLL-45BI-TR | IC SRAM 4MBIT PARALLEL 36TFBGA |
Product Description
Product Details
DESCRIPTION
TheISSIIS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access times: 8, 10, 20 ns• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for VDD 2.4V to 3.6V
speed = 8ns for VDD 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | ISSI |
Product Category | Memory ICs |
Series | IS61WV5128BLL |
Type | Asynchronous |
Packaging | Tray Alternate Packaging |
Unit-Weight | 0.008042 oz |
Mounting-Style | SMD/SMT |
Package-Case | 36-MBGA |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.4 V ~ 3.6 V |
Supplier-Device-Package | 36-miniBGA (8x10) |
Memory Capacity | 4M (512K x 8) |
Memory-Type | SRAM - Asynchronous |
Speed | 10ns |
Data-Rate | SDR |
Access-Time | 10 ns |
Format-Memory | RAM |
Maximum Operating Temperature | + 85 C |
Operating temperature range | - 40 C |
Interface-Type | Parallel |
Organization | 512 k x 8 |
Supply-Current-Max | 45 mA |
Supply-Voltage-Max | 3.6 V |
Supply-Voltage-Min | 2.4 V |
Package-Case | BGA-36 |
Functional compatible component
Form,Package,Functional compatible component
Manufacturer Part# | Description | Manufacturer | Compare |
IS61WV5128BLL-10BI Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 | Integrated Silicon Solution Inc | IS61WV5128BLL-10BLI vs IS61WV5128BLL-10BI |
Descriptions
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-miniBGA (8x10)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36-Pin Mini-BGA
SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
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