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IS62WV102416EBLL-45BLI IC SRAM 16MBIT PARALLEL 48VFBGA ISSI, Integrated Silicon Solution Inc

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xProduct Details
Memory Type | Volatile | Memory Format | SRAM |
---|---|---|---|
Technology | SRAM - Asynchronous | Memory Size | 16Mbit |
Memory Organization | 1M X 16 | Memory Interface | Parallel |
Clock Frequency | - | Write Cycle Time - Word, Page | 45ns |
Access Time | 45 Ns | Voltage - Supply | 2.2V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 48-VFBGA | Supplier Device Package | 48-VFBGA (6x8) |
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Part Number | Description | |
---|---|---|
IS62WV102416EBLL-45BLI | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV10248EBLL-45BLI | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV102416FBLL-45BLI | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV51216EBLL-45BLI | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV51216HBLL-45B2LI | 8Mb, Low Power/Power Saver,Async | |
IS62WV12816EALL-55BLI-TR | IC SRAM 2MBIT PARALLEL 48TFBGA | |
IS62WV12816EALL-55BLI | IC SRAM 2MBIT PARALLEL 48TFBGA | |
IS66WVE4M16TBLL-70BLI-TR | IC PSRAM 64MBIT PARALLEL 48TFBGA | |
IS62WV25616EALL-55BLI-TR | IC SRAM 4MBIT PARALLEL 48VFBGA | |
IS66WVE4M16TBLL-70BLI | IC PSRAM 64MBIT PARALLEL 48TFBGA | |
IS62WV25616EALL-55BLI | IC SRAM 4MBIT PARALLEL 48VFBGA | |
IS62WV10248EBLL-45BLI-TR | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV51216EBLL-45BLI-TR | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV51216EALL-55BLI-TR | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV51216EALL-55BLI | IC SRAM 8MBIT PARALLEL 48VFBGA | |
IS62WV102416EBLL-45BLI-TR | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV102416EBLL-55BLI-TR | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV20488FBLL-45BLI-TR | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV20488FBLL-45BLI | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV102416EBLL-55BLI | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV102416EALL-55BLI-TR | IC SRAM 16MBIT PARALLEL 48VFBGA | |
IS62WV102416EALL-55BLI | IC SRAM 16MBIT PARALLEL 48VFBGA |
Product Description
Product Details
DESCRIPTION
TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.
FEATURES
• High-speed access times: 25, 35 ns• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CS1 and OE options
• CS1 power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS62WV102416ALL)
speed = 35ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS62/65WV102416BLL)
speed = 25ns for VDD 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | ISSI |
Product Category | Memory ICs |
Series | - |
Type | Asynchronous |
Packaging | Tray Alternate Packaging |
Mounting-Style | SMD/SMT |
Package-Case | 48-VFBGA |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.2 V ~ 3.6 V |
Supplier-Device-Package | 48-VFBGA (6x8) |
Memory Capacity | 16M (1M x 16) |
Memory-Type | SRAM - Asynchronous |
Speed | 45ns |
Access-Time | 45 ns |
Format-Memory | RAM |
Maximum Operating Temperature | + 85 C |
Operating temperature range | - 40 C |
Interface-Type | Parallel |
Organization | 1 M x 16 |
Supply-Current-Max | 12 mA |
Supply-Voltage-Max | 3.6 V |
Supply-Voltage-Min | 2.2 V |
Package-Case | BGA-48 |
Descriptions
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 45ns 48-VFBGA (6x8)
SRAM Chip Async Single 2.5V/3.3V 16M-bit 1M x 16 45ns 48-Pin TFBGA
SRAM 16Mb Low Pwr/Pwr Svr Async 1Mx16 45ns
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