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IS43R32400E-5BL-TR IC DRAM 128MBIT PAR 144LFBGA ISSI, Integrated Silicon Solution Inc

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xProduct Details
Memory Type | Volatile | Memory Format | DRAM |
---|---|---|---|
Technology | SDRAM - DDR | Memory Size | 128Mbit |
Memory Organization | 4M X 32 | Memory Interface | Parallel |
Clock Frequency | 200 MHz | Write Cycle Time - Word, Page | 15ns |
Access Time | 700 Ps | Voltage - Supply | 2.3V ~ 2.7V |
Operating Temperature | 0°C ~ 70°C (TA) | Mounting Type | Surface Mount |
Package / Case | 144-LFBGA | Supplier Device Package | 144-LFBGA (12x12) |
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Part Number | Description | |
---|---|---|
IS43R32400E-5BL-TR | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32400E-4BL-TR | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32400E-5BLI-TR | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32400E-5BL | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32400E-5BLI | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32160D-5BL | IC DRAM 512MBIT PAR 144LFBGA | |
IS43R32160D-5BLI | IC DRAM 512MBIT PAR 144LFBGA | |
IS43R32160D-5BLI-TR | IC DRAM 512MBIT PAR 144LFBGA | |
IS43R32160D-5BL-TR | IC DRAM 512MBIT PAR 144LFBGA | |
IS43R32400E-4BL | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32800D-5BL | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-5BLI | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-5BLI-TR | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-5BL-TR | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-6BL | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-6BL-TR | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32400E-4B-TR | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32800D-5BI-TR | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-5B-TR | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32400E-4B | IC DRAM 128MBIT PAR 144LFBGA | |
IS43R32800D-5B | IC DRAM 256MBIT PAR 144LFBGA | |
IS43R32800D-5BI | IC DRAM 256MBIT PAR 144LFBGA |
Product Description
Product Details
FEATURES
● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8n-bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 )
● Write Leveling
● Up to 200 MHz on DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | ISSI |
Product Category | Memory ICs |
Series | IS43R32400E |
Type | DDR1 |
Packaging | Tape & Reel (TR) Alternate Packaging |
Mounting-Style | SMD/SMT |
Package-Case | 144-LFBGA |
Operating-Temperature | 0°C ~ 70°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.3 V ~ 2.7 V |
Supplier-Device-Package | 144-LFBGA (12x12) |
Memory Capacity | 128M (4M x 32) |
Memory-Type | DDR SDRAM |
Speed | 200MHz |
Access-Time | 5 ns |
Format-Memory | RAM |
Maximum Operating Temperature | + 70 C |
Operating temperature range | 0 C |
Organization | 4 M x 32 |
Supply-Current-Max | 320 mA |
Data-Bus-Width | 32 bit |
Supply-Voltage-Max | 2.7 V |
Supply-Voltage-Min | 2.3 V |
Package-Case | LFBGA-144 |
Maximum-Clock-Frequency | 200 MHz |
Descriptions
SDRAM - DDR Memory IC 128Mb (4M x 32) Parallel 200MHz 700ps 144-LFBGA (12x12)
DRAM Chip DDR SDRAM 128Mbit 4Mx32 2.5V 144-Pin LFBGA T/R
DRAM 128M (4Mx32) 200MHz DDR 2.5v
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