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MT41J128M16JT-093:K TR IC DRAM 2GBIT PAR 96FBGA Micron Technology Inc.

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xProduct Details
Memory Type | Volatile | Memory Format | DRAM |
---|---|---|---|
Technology | SDRAM - DDR3 | Memory Size | 2Gbit |
Memory Organization | 128M X 16 | Memory Interface | Parallel |
Clock Frequency | 1.066 GHz | Write Cycle Time - Word, Page | - |
Access Time | 20 Ns | Voltage - Supply | 1.425V ~ 1.575V |
Operating Temperature | 0°C ~ 95°C (TC) | Mounting Type | Surface Mount |
Package / Case | 96-TFBGA | Supplier Device Package | 96-FBGA (8x14) |
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Part Number | Description | |
---|---|---|
MT41K128M16JT-107 AAT:K | IC DRAM 2GBIT PAR 96FBGA | |
MT41K128M16JT-107 AAT:K TR | IC DRAM 2GBIT PAR 96FBGA | |
MT41K128M16JT-125 AAT:K TR | IC DRAM 2GBIT PARALLEL 96FBGA | |
MT41J128M16JT-093:K TR | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-093G:K TR | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-107:K TR | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-107G:K TR | IC DRAM 2GBIT PAR 96FBGA | |
MT41J64M16JT-125:G TR | IC DRAM 1GBIT PARALLEL 96FBGA | |
MT41J64M16JT-15E AIT:G TR | IC DRAM 1GBIT PAR 96FBGA | |
MT41J64M16JT-15E XIT:G TR | IC DRAM 1GBIT PAR 96FBGA | |
MT41J64M16JT-187E:G TR | IC DRAM 1GBIT PAR 96FBGA | |
MT41K64M16JT-125:G TR | IC DRAM 1GBIT PARALLEL 96FBGA | |
MT41K64M16JT-15E:G TR | IC DRAM 1GBIT PAR 96FBGA | |
MT41J128M16JT-093:K | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-093G:K | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-107:K | IC DRAM 2GBIT PAR 96FBGA | |
MT41J128M16JT-107G:K | IC DRAM 2GBIT PAR 96FBGA | |
MT41J64M16JT-125E:G | IC DRAM 1GBIT PARALLEL 96FBGA | |
MT41K64M16JT-125:G | IC DRAM 1GBIT PARALLEL 96FBGA | |
MT41K64M16JT-15E:G | IC DRAM 1GBIT PAR 96FBGA | |
MT41J128M16JT-093 J:K | IC DRAM 2GBIT PAR 96FBGA |
Product Description
Product Details
DDR3 SDRAM
2Gb: x4, x8, x16 DDR3 SDRAM
Features
• VDD= VDDQ= 1.5V ±0.075V• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Tape & Reel (TR) Alternate Packaging |
Package-Case | 96-TFBGA |
Operating-Temperature | 0°C ~ 95°C (TC) |
Interface | Parallel |
Voltage-Supply | 1.425 V ~ 1.575 V |
Supplier-Device-Package | 96-FBGA (8x14) |
Memory Capacity | 2G (128M x 16) |
Memory-Type | DDR3 SDRAM |
Speed | 1066MHz |
Format-Memory | RAM |
Descriptions
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 1066MHz 20ns 96-FBGA (8x14)
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA
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