MT41J128M16JT-093:K TR IC DRAM 2GBIT PAR 96FBGA Micron Technology Inc.

Brand Name Micron Technology Inc.
Model Number MT41J128M16JT-093:K TR
Minimum Order Quantity 1
Price Based on current price
Packaging Details anti-static bag & cardboard box
Delivery Time 3-5 work days
Payment Terms T/T
Supply Ability In stock

Contact me for free samples and coupons.

Whatsapp:0086 18588475571

Wechat: 0086 18588475571

Skype: sales10@aixton.com

If you have any concern, we provide 24-hour online help.

x
Product Details
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR3 Memory Size 2Gbit
Memory Organization 128M X 16 Memory Interface Parallel
Clock Frequency 1.066 GHz Write Cycle Time - Word, Page -
Access Time 20 Ns Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount
Package / Case 96-TFBGA Supplier Device Package 96-FBGA (8x14)
You can tick the products you need and communicate with us in the message board.
Part Number Description
MT41K128M16JT-107 AAT:K IC DRAM 2GBIT PAR 96FBGA
MT41K128M16JT-107 AAT:K TR IC DRAM 2GBIT PAR 96FBGA
MT41K128M16JT-125 AAT:K TR IC DRAM 2GBIT PARALLEL 96FBGA
MT41J128M16JT-093:K TR IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-093G:K TR IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-107:K TR IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-107G:K TR IC DRAM 2GBIT PAR 96FBGA
MT41J64M16JT-125:G TR IC DRAM 1GBIT PARALLEL 96FBGA
MT41J64M16JT-15E AIT:G TR IC DRAM 1GBIT PAR 96FBGA
MT41J64M16JT-15E XIT:G TR IC DRAM 1GBIT PAR 96FBGA
MT41J64M16JT-187E:G TR IC DRAM 1GBIT PAR 96FBGA
MT41K64M16JT-125:G TR IC DRAM 1GBIT PARALLEL 96FBGA
MT41K64M16JT-15E:G TR IC DRAM 1GBIT PAR 96FBGA
MT41J128M16JT-093:K IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-093G:K IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-107:K IC DRAM 2GBIT PAR 96FBGA
MT41J128M16JT-107G:K IC DRAM 2GBIT PAR 96FBGA
MT41J64M16JT-125E:G IC DRAM 1GBIT PARALLEL 96FBGA
MT41K64M16JT-125:G IC DRAM 1GBIT PARALLEL 96FBGA
MT41K64M16JT-15E:G IC DRAM 1GBIT PAR 96FBGA
MT41J128M16JT-093 J:K IC DRAM 2GBIT PAR 96FBGA
Leave a Message
Part Number Description
Product Description

Product Details

 

DDR3 SDRAM

2Gb: x4, x8, x16 DDR3 SDRAM

 

 

Features

• VDD= VDDQ= 1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration

 

 

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tape & Reel (TR) Alternate Packaging
Package-Case 96-TFBGA
Operating-Temperature 0°C ~ 95°C (TC)
Interface Parallel
Voltage-Supply 1.425 V ~ 1.575 V
Supplier-Device-Package 96-FBGA (8x14)
Memory Capacity 2G (128M x 16)
Memory-Type DDR3 SDRAM
Speed 1066MHz
Format-Memory RAM

Descriptions

SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 1066MHz 20ns 96-FBGA (8x14)
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA