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CAT28C512LI12 IC EEPROM 512KBIT PARALLEL 32DIP onsemi

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xProduct Details
Memory Type | Non-Volatile | Memory Format | EEPROM |
---|---|---|---|
Technology | EEPROM | Memory Size | 512Kbit |
Memory Organization | 64K X 8 | Memory Interface | Parallel |
Clock Frequency | - | Write Cycle Time - Word, Page | 5ms |
Access Time | 120 Ns | Voltage - Supply | 4.5V ~ 5.5V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Through Hole |
Package / Case | 32-DIP (0.600", 15.24mm) | Supplier Device Package | 32-PDIP |
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Part Number | Description | |
---|---|---|
CAT28C512LI12 | IC EEPROM 512KBIT PARALLEL 32DIP | |
CAT28F001LI-12B | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F010LI12 | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F020LI12 | IC FLASH 2MBIT PARALLEL 32DIP | |
CAT28F512LI12 | IC FLASH 512KBIT PARALLEL 32DIP | |
CAT28C512L12 | IC EEPROM 512KBIT PARALLEL 32DIP | |
CAT28C512LI15 | IC EEPROM 512KBIT PARALLEL 32DIP | |
CAT28F001L-12B | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F001L-12T | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F001L-90B | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F010L12 | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F010LI90 | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F020L12 | IC FLASH 2MBIT PARALLEL 32DIP | |
CAT28F512L12 | IC FLASH 512KBIT PARALLEL 32DIP | |
CAT28F020L90 | IC FLASH 2MBIT PARALLEL 32DIP | |
CAT28F001LI-12T | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28F512LI90 | IC FLASH 512KBIT PARALLEL 32DIP | |
CAT28F512L90 | IC FLASH 512KBIT PARALLEL 32DIP | |
CAT28F020LI90 | IC FLASH 2MBIT PARALLEL 32DIP | |
CAT28F010L90 | IC FLASH 1MBIT PARALLEL 32DIP | |
CAT28C512L15 | IC EEPROM 512KBIT PARALLEL 32DIP |
Product Description
Product Details
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware.
FEATURES
■ Fast Read Access Times: 120/150 ns■ Low Power CMOS Dissipation:
–Active: 50 mA Max.
–Standby: 200 µA Max.
■ Simple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
■ Fast Write Cycle Time:
–5ms Max
■ CMOS and TTL Compatible I/O
■ Automatic Page Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
■ End of Write Detection:
–Toggle Bit
–DATA Polling
■ Hardware and Software Write Protection
■ 100,000 Program/Erase Cycles
■ 100 Year Data Retention
■ Commercial, Industrial and Automotive Temperature Ranges
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | onsemi |
Product Category | Memory ICs |
Series | - |
Packaging | Tube |
Package-Case | 32-DIP (0.600", 15.24mm) |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 4.5 V ~ 5.5 V |
Supplier-Device-Package | 32-PDIP |
Memory Capacity | 512K (64K x 8) |
Memory-Type | EEPROM |
Speed | 120ns |
Format-Memory | EEPROMs - Parallel |
Descriptions
EEPROM Memory IC 512Kb (64K x 8) Parallel 120ns 32-PDIP
EEPROM Parallel 512K-bit 64K x 8 5V 32-Pin PDIP Tube
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